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We report the development of 480 nm cyan and 520 nm green light emitting diodes (LEDs) with a highly stable emission wavelength. The shift is less than 3 nm when the drive current density is changed from 0.1 to 38 A/cm(2). LEDs have been obtained in GaInN-based homoepitaxy on nonpolar m-plane GaN bulk substrates. For increasing emission wavelength we find a large number of additional dislocations generated within the quantum wells (2x10(8) to similar to 10(10) cm(2)) and a decrease in the electroluminescence efficiency. This suggests that the strain induced generation of defects plays a significant role in the performance limitations.
