RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes
Zhu, M., You, S., Detchprohm, T., Paskova, T., Preble, E. A., & Wetzel, C. (2010). Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 207(6), 1305-1308. https://doi.org/10.1002/pssa.200983645
We report the growth and structural characteristics of green and yellow (529-576 nm) GaInN/GaN light emitting diodes (LEDs) grown on two types of c-plane substrates bulk GaN and sapphire. In this longer wavelength range, depending on the substrate, we find different strain relaxation mechanisms within the GaInN/GaN quantum well (QW) region. In optimized epitaxy, structures on sapphire that contain a low density of threading dislocations (TDs) within the n-GaN show virtually no generation of additional misfit dislocations (MDs) (
