RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Poisson ratio of epitaxial germanium films grown on silicon
Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. (2013). Poisson ratio of epitaxial germanium films grown on silicon. Journal of Electronic Materials, 42(1), 40-46. https://doi.org/10.1007/s11664-012-2337-6
An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ?001? substrates, using the sin2 ? method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film.