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PLZT-based multilayer composite thin films, Part I
Experimental investigation of composite film structures
Dausch, D. E., Furman, E., Wang, F., & Haertling, G. H. (1996). PLZT-based multilayer composite thin films, Part I: Experimental investigation of composite film structures. Ferroelectrics, 177(3-4), 221-236. https://doi.org/10.1080/00150199608223631
Composite thin films produced by depositing alternating layers of various PLZTT compositions were fabricated on Pt-coated Si wafer and Ag foil substrates. Films were prepared by MOD processes including automatic spin and dip coating from acetate precursors followed by annealing at 700°C. Ferroelectric (FE)/antiferroelectric (AFE), FE/relaxor and relaxor/AFE composites consisted of individual layer compositions including ferroelectric PLZT 2/55/45 and 7/65/35; AFE PJLZT 0/100/0, 0/96/4 and 0/95/5; relaxor PLZT 9.5/65/35 and 12/65/35. The structural and electrical properties of the composite films were investigated. Composites were developed with 1) improved AFE-to-FE domain switching with decreased AFE-to-FE transition field and increased saturation polarization for materials with AFE-type properties, 2) increased induced polarization with decreased coercivity and polarization remanence for relaxor-type composites and 3) increased hysteresis loop squareness for ferroelectric memory materials compared with films of homogeneous PLZT composition.
