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Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition
Gehrke, T., Lenthicum, KJ., Rajagopal, P., Preble, EA., Carlson, EP., Robin, BM., & Davis, RF. (2000). Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition. In CH. Carter, RP. Devaty, & GS. Rohrer (Eds.), Silicon Carbide and Related Materials-1999 Parts 1 & 2 (pp. 1491-1494). TRANS TECH PUBLICATIONS LTD.
Pendeo-epitaxial growth of AlxGa1-xN thin films has been achieved on stripes etched in a GaN seed layer on 6H-SiC(0001) substrates using metallorganic vapor phase epitaxy. Fully coalesced thin films have been characterized for a comparison study with conventional grown AlxGa1-xN thin films using scanning electron microscopy, X-ray diffraction, and high resolution scanning Auger microprobe. A FWHM of 794 arcsec has been measured for pendeo-epitaxially grown Al10Ga90N films, which is comparable to conventional grown films on 2H-AlN/6H-SiC substrate. A variation of 1% in the atomic Al content of Al10Ga90N thin films related to the microstructure has been measured.
