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Microstructure of nonpolar a-plane GaN grown on (1120) 4H-SiC investigated by TEM.
Zakharov, DN., Liliental-Weber, Z., Wagner, B., Reitmeier, Z., Preble, EA., & Davis, RF. (2003). Microstructure of nonpolar a-plane GaN grown on (1120) 4H-SiC investigated by TEM. In HM. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), GAN and Related Alloys-2003 (pp. 747-752). Chinese Materials Research Society.
Plan-view and cross-section samples of (1120) (a-plane) GaN grown on 4H-SiC substrates with AlN buffer layers were studied by transmission electron microscopy. Samples reveal the presence of a high density of stacking faults formed on the basal plane of hexagonal GaN. These stacking faults, terminated in the growth plane by threading dislocations, nucleate at the AlN/4H-SiC interface and propagate to the GaN layer surface. High resolution electron microscopy shows that the majority of stacking faults are low-energy planar defects of the type I-1 and I-2. High energy stacking faults (E) are not observed.
