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Measured DC performance of large arrays of silicon field emitters
Palmer, WD., Mancusi, JE., Ball, CA., Joines, WT., McGuire, GE., Temple, D., Vellenga, DG., & Yadon, L. (1994). Measured DC performance of large arrays of silicon field emitters. IEEE Transactions on Electron Devices, 41(10), 1866-1870. https://doi.org/10.1109/16.324600
Large arrays of silicon field emitters are being produced at MCNC for use in RF and microwave amplifiers and other high-intensity electron beam source applications. Significant levels of both total emitted current (up to 7 mA) and current density (7 A/cm2) are obtained using gate electrode potentials less than 250 V with emission efficiencies as high as 99%. Large arrays of field emitters are operated at 100% duty cycle for over 18 hours. Data from devices with 1197 and 232 630 tips are presented, along with electrical yield statistics for arrays of other sizes.
