RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
A three terminal tunneling device that has a smaller voltage transition between off-current and on-current states and which also has less dependence on the lateral dimensions of the device. The device is a hybrid between a MOS transistor, a gated diode and a tunneling diode. The semiconductor device includes a lightly doped substrate of a first conductivity type. The lightly doped substrate will include a first heavily doped region of a first conductivity type formed in the substrate and a lightly doped layer of a first conductivity type disposed on the substrate and the first heavily doped region. The device also including a gate insulator layer disposed on the lightly doped layer and underlying a portion of the first heavily doped region and a gate electrode that is disposed on the gate insulator layer. Additionally, the device will include a second heavily doped region of a first conductivity formed in the substrate extending into the first heavily doped region of a first conductivity and a heavily doped region of a second conductivity formed in the substrate extending into the lightly doped substrate and spatially isolated from the first heavily doped region.