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Deep centers in semi-insulating current topics in solid state physics Fe-doped native GaN substrates grown by hydride vapour phase epitaxy
Fang, Z. .-Q., Claflin, B., Look, D. C., Elhamri, S., Smith, H. E., Mitchel, W. C., Hanser, D., Preble, E. A., & Evans, K. R. (2008). Deep centers in semi-insulating current topics in solid state physics Fe-doped native GaN substrates grown by hydride vapour phase epitaxy. In T. Palacios, & D. Jena (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (pp. 1508-1510). WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.200778430
Electrical properties, Fe concentration, and deep centers in semi-insulating Fe-doped GaN substrates grown by hydride vapor phase epitaxy (HVPE) were characterized by temperature-dependent Hall-effect measurements, secondary ion mass spectroscopy, and thermally stimulated current (TSC) spectroscopy, Five adjacent samples from a low-[Fe] wafer displayed very high resistivity, dominated by a center at 0,94 eV. At least six traps were observed in the samples by TSC, with trap (0.56-0.60 eV) being dominant. A metastable trap A, at similar to 0.82 eV appeared after white-light illumination at 300 K-A sample from a high-[Fe] wafer displayed a lower resistivity, dominated by a center at 0,58 eV. The largest TSC peak in this sample was trap A(1), although trap B also appeared. These TSC traps are compared with deep-level-transient- spectroscopy traps reported in conductive epitaxial and bulk HVPE-GaN.
