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To obtain reduced specific contact resistivity, iodine donors and silver acceptors were ion-implanted into n-type and p-type (Bi,Sb)2(Se,Te)3 materials, respectively, to achieve >10 times higher doping at the surface. Implantation into n-type materials caused the specific contact resistivity to decrease from 1.7?×?10?6???cm2 to 4.5?×?10?7???cm2. Implantation into p-type materials caused specific contact resistivity to decrease from 7.7?×?10?7???cm2 to 2.7?×?10?7???cm2. For implanted thin-film superlattices, the non-implanted values of 1.4?×?10?7???cm2 and 5.3?×?10?8???cm2 precipitously dropped below the detection limit after implantation, ?10?8???cm2. These reductions in specific contact resistivity are consistent with an increase in tunneling across the contact.