RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Characterization and comparison of 4H-SiC(11(2)over-bar0) and 4H-SiC(0001) 8 degrees off-axis substrates and homoepitaxial films
Bishop, SM., Preble, EA., Hallin, C., Henry, A., Sarney, W., Chang, HR., Storasta, L., Jacobson, H., Reitmeier, ZJ., Wagner, BP., Janzen, E., & Davis, RF. (2004). Characterization and comparison of 4H-SiC(11(2)over-bar0) and 4H-SiC(0001) 8 degrees off-axis substrates and homoepitaxial films. In M. Dudley, P. Gouma, T. Kimoto, PG. Neudeck, & SE. Saddow (Eds.), Silicon Carbide 2004-Materials, Processing, and Devices (pp. 53-58). Chinese Materials Research Society.
Homoepitaxial films of 4H-SiC(11 (2) over bar0) and 8degrees off-axis 4H-SiC(0001) have been grown and characterized. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the [11 (2) over bar0]-oriented wafers were smaller than the analogous values acquired from the (0001) materials. Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 mum (11 (2) over bar0) film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. The separation distance between stacking faults was determined to be 10 pm by transmission electron microscopy. Hall mobilities and carrier concentrations of 12,200 cm 2 /Vs and 3.1x10(14) cm(-3) and 800 cm(2)/Vs and 7.4 x 10(14) cm(-3) were measured at 100degreesK and 300degreesK, respectively. Photoluminescence indicated high purity. 4H-SiC(l 120) PiN devices exhibited average blocking voltages to 1344 V and a minimum average forward voltage drop of 3.94 V.
