Edward A. Preble

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Continuous monitoring of heart rate variability in free-living conditions using wearable sensors: Exploratory observational study

Using scammers’ data to estimate the impact and importance of preventing repeat mail fraud victimization

Fraud victimization across the lifespan: Evidence on repeat victimization using perpetrator data

Modular open-core system for collection and near real-time processing of high-resolution data from wearable sensors

Wearable sensor-based detection of influenza in presymptomatic and asymptomatic individuals

Feasibility of mild traumatic brain injury assessment based on cardiovascular response to postural change

High-Temperature Electromechanical Characterization of AlN Single Crystals

Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography

GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate