Edward A. Preble

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Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

GaN Power Schottky Diodes

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Effect of Substrate Offcut on AlGaN/GaN HFET structures on Bulk GaN Substrates

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

UV Light Emitter on Bulk Semipolar (11-22) GaN

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates