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Formation of Aluminum-Oxide Films from Aluminum Hexafluoroacetylacetonate at 350-450-Degrees C
January 01, 1990
Article
Further Comments on the Thermal Etching of Silicon - the Surface-Morphology of (100), (111) and (110) Wafers in the Temperature-Range 900-Degrees-C 1150-Degrees-C
January 01, 1990