RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Detchprohm, T., Zhao, L., Zhu, M., Stark, C., Dibiccari, M., You, S., Hou, W., Preble, E. A., Paskova, T., Evans, K., & Wetzel, C. (2011). UV Light Emitter on Bulk Semipolar (11-22) GaN. In 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) IEEE.
A 392 nm GaInN-based UV light emitter has been demonstrated by homoepitaxial growth technique aiming to improve quantum efficiency by crystalline perfection of the heterostructures on naturally stable semipolar (11-22) bulk GaN.