Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

Edward Alfred Preble; S Einfeldt; AM Roskowski; Edward Alfred Preble; Robert F. Davis

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

Einfeldt, S., Roskowski, AM., Preble, EA., & Davis, RF. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. Applied Physics Letters, 80(6), 953-955.

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Abstract

The strain in thin GaN layers grown by maskless pendeoepitaxy has been investigated using high-resolution x-ray diffraction and finite-element simulations. The crystallographic tilt of the free-hanging wings was determined to result from the strain relaxation of the seed stripes along [0001]. The impact of the dimensions of the pendeostructure and of the formation of crystal defects on the expected wing tilt is discussed. (C) 2002 American Institute of Physics.