RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Storm, D. F., Katzer, D. S., Deen, D. A., Bass, R., Meyer, D. J., Roussos, J. A., Binari, S. C., Paskova, T., Preble, E. A., & Evans, K. R. (2010). Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures. Solid-State Electronics, 54(11), 1470-1473. https://doi.org/10.1016/j.sse.2010.05.041
AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses. d(UID), varying between 50 nm and 500 nm. We have found that the heterostructures with UID buffers thicker than 200 nm exhibit much improved Hall properties and inter-device isolation current compared to heterostructures with d(UID) <200 nm. The output conductance of devices fabricated on these heterostructures increases as d(UID) decreases below 200 nm, and devices with gate lengths of 240 nm and 1 mu m exhibited no significant difference in output conductance. Evidence of buffer trapping is observed in devices for which d(UID)
