Plasma treatment apparatus

Abstract

A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma. Preferably, the ratio of the width to the height of the chamber is 10:1 or larger so that the chamber includes a large area planar surface adjacent the plasma sheath and adjacent to which a large area substrate or a plurality of substrates is arranged, whereby large area treatment, such as diamond deposition, can be performed.