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Optimization of electrolyte chemistry and process parameters for void-free copper electroplating of high aspect ratio through-silicon vias for 3D Integration
Malta, D., Gregory, C., Temple, D., Wang, C., Richardson, T., & Zhang, Y. (2009). Optimization of electrolyte chemistry and process parameters for void-free copper electroplating of high aspect ratio through-silicon vias for 3D Integration. In Electronic Components and Technology Conference, 59th (pp. 1301 - 1306)