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Optical characterization of bulk GaN substrates with and plane surfaces
Paskov, P. P., Monemar, B., Paskova, T., Preble, E. A., Hanser, A. D., & Evans, K. R. (2009). Optical characterization of bulk GaN substrates with and plane surfaces. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 (pp. S763-S766). WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.200880918
Thick free-standing GaN grown by hydride vapour phase epitaxy and epi-ready substrates with c-, a-, m-plane surfaces are examined by variable-temperature photoluminescence (PL), polarized PL and spatially resolved micro-PL. Both as-grown samples and polished substrates exhibit linewidth of the donor-bound exciton emission below 0.7 meV at 2 K indicative of a high structural quality of the material. For as-grown samples the relative intensity of green (2.4 eV) and red (1.8 eV) deep-level-defect emissions are found to decrease with increasing sample thickness. Based on plentiful two-electron-transition spectra measured in the samples the electronic fine structure of the donors and their bound-exciton complexes was examined and discussed. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
