RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Nonpolar a- and m-plane bulk GaN sliced from boules
Structural and optical characteristics
Paskova, T., Kroeger, R., Hornmell, A., Paskov, P. P., Monernar, B., Preble, E., Hauser, A., Williams, N. M., & Tutor, M. (2007). Nonpolar a- and m-plane bulk GaN sliced from boules: Structural and optical characteristics. In Physica Status Solidi C-Current Topics in Solid State Physics, Vol. 4, No. 7, 2007 (pp. 2536-+). WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.200674818
Bulk GaN substrates grown by HVPE in the [0001] direction and sliced along the (11-20) a-plane and the (1-100) m-plane have been studied by SEM, TEM, HRXRD, CL and PL. Smooth morphology, low defect density, and narrow linewidths of the main XRD reflections and PL peaks are revealed and thus all the results demonstrate superior structural and optical quality of both a- and m-plane bulk GaN material achieved by HVPE growth of boules in the conventional [0001] direction and subsequently sliced along nonpolar planes, implying the approach as the most promising to produce nonpolar GaN substrates.
