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III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
Liu, J. P., Ryou, J. .-H., Yoo, D., Zhang, Y., Limb, J., Horne, C. A., Shen, S. .-C., Dupuis, R. D., Hanser, A. D., Preble, E. A., & Evans, K. R. (2008). III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge. Applied Physics Letters, 92(13). https://doi.org/10.1063/1.2906372
Charge is observed at the regrowth interface for heterostructure field-effect transistors (HFETs) grown on semi-insulating (SI) bulk GaN substrates, even with Fe doping in the regrown buffer layer for reduction of the interface charge. Ultraviolet photoenhanced chemical (PEC) etching is used to treat the surface of SI bulk GaN substrates. Employing optimized etching conditions, a very smooth surface is achieved for the bulk GaN substrate after the etching. The charge at the regrowth interface is eliminated for HFETs grown on etched SI GaN substrates. Secondary ion mass spectrometry measurements show that the Si impurity concentration at the regrowth interface for HFETs grown on etched SI GaN substrates is much lower than that for HFETs grown on unetched SI GaN substrates, which suggests that the charge-containing layer on the SI substrate is removed by PEC etching and that the effects of the reduced charge layer near the regrowth interface can be eliminated by Fe doping for HFETs grown on etched SI substrates. (C) 2008 American Institute of Physics.
