RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization
Bishop, SM., Preble, EA., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, BP., Reitmeier, Z., Janzen, E., & Davis, RF. (2004). Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization. In R. Madar, J. Camassel, & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003 (Vol. Parts 1 and 2, pp. 221-224). TRANS TECH PUBLICATIONS LTD.
Structural, microstructural, electrical and optical characterization of 4H-SiC(1120) homoepitaxial films and their substrates have been conducted. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the (1120) wafers (15 to 40 arcsec) were smaller than the analogous values acquired from the (000 1) materials (15 to 60 arcsec). Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 mum film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. Hall mobilities and carrier concentrations of 12,200 cm(2)/Vs and 3.1 x 10(14)/cm(3) and 800 cm(2)/Vs and 7.4 x 10(14)/cm(3) were measured at 100degreesK and 300degreesK, respectively. Photoluminescence indicated high purity.
