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Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
Wagner, BP., Preble, EA., Reitmeier, ZJ., Davis, RF., Zakharov, DN., & Liliental-Weber, Z. (2003). Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates. In HM. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), GAN and Related Alloys-2003 (pp. 375-379). Chinese Materials Research Society.
GaN thin films were grown via metalorganic vapor phase epitaxy on a-plane 4H-SiC substrates on which had been deposited an AIN buffer layer. Atomic force microscopy images revealed that the microstructure of the AIN buffer layer and the subsequently deposited GaN had a highly oriented growth structure where parallel growth features propagated in the [1-1.0] direction. Scanning electron microscopy showed that the interfaces between the substrate, buffer layer, and epi-layer were continuous. Cracking was observed in GaN films having a thickness greater than 800 nm. Plan-view transmission electron microscopy analysis revealed stacking faults and threading dislocations with densities of similar to 1.6 x 10(6) cm(-1) and similar to3.3 x 10(10)cm(-1), respectively. X-ray diffraction confirmed that the GaN was deposited epitaxially in the same orientation as the substrate. The average on- and off-axis x-ray full-width half-maxima of the (11.0) and the (10.0) reflections were 948 arcsec and 5448 arcsec, respectively.
