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Further Comments on the Thermal Etching of Silicon - the Surface-Morphology of (100), (111) and (110) Wafers in the Temperature-Range 900-Degrees-C 1150-Degrees-C
Reisman, A., Temple, D., & Smith, PL. (1990). Further Comments on the Thermal Etching of Silicon - the Surface-Morphology of (100), (111) and (110) Wafers in the Temperature-Range 900-Degrees-C 1150-Degrees-C. Journal of the Electrochemical Society, 137(1), 284-290.
