RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction
Stark, C. J. M., Detchprohm, T., Zhao, L., Paskova, T., Preble, E. A., & Wetzel, C. (2012). Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction. Applied Physics Letters, 101(23), Article 232106. https://doi.org/10.1063/1.4769442
Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06 degrees to 2.24 degrees), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769442]
