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Enlargement of bulk non-polar GaN substrates by HVPE regrowth
Lai, K. Y., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Hanser, A. D., Preble, E. A., Liu, L., Paskova, T., & Evans, K. R. (2008). Enlargement of bulk non-polar GaN substrates by HVPE regrowth. In T. Palacios, & D. Jena (Eds.), PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 (pp. 1886-+). WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.200778743
M-plane non-polar bulk GaN substrates were regrown by hydride vapour phase epitaxy (HVPE), aiming to enlarge their lateral size. The non-polar GaN substrates were synthesized by growing thick GaN boules by HVPE along the c-axis, and wafering transversely to expose non-polar (m- or a-plane) surfaces. Non-polar GaN substrates obtained in this manner contains lower defect density comparing to those produced by heteroepitaxial growth. After the regrowth, substantial lateral expansion in [0001], [11 (2) under bar0] and [(11) under bar 20] was observed. Threading dislocation densities were estimated by cathodoluminescence measured at the cross-section areas. The dislocation densities in the substrate and the regrown areas were approximately 5x10(6) cm(-2) and 1x10(6) cm(-2), respectively, indicating a comparable, structural quality achieved by the re-growth. Non-polar GaN substrates prepared by this process provide a promising method to fabricate devices for next generation.
