RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Wang, Y., Xu, H., Alur, S., Sharma, Y., Tong, F., Gartland, P., Issacs-Smith, T., Ahyi, C., Williams, J., Park, M., Wheeler, G., Johnson, M., Allerman, A. A., Hanser, A., Paskova, T., Preble, E. A., Evans, K. R., Wetzel, C., & Khan, A. (2011). Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.201001158
Vertical Schottky rectifiers were fabricated on two GaN wafers synthesised by hydride vapor phase epitaxy (HVPE) process: n- epilayer on n+ bulk and n- bulk. Full backside ohmic contact and circular Schottky contacts were deposited on the N face and Ga face of the substrate, respectively. The devices showed excellent electrical characteristics. The device fabricated on n-epilayer on n+ bulk substrate showed a breakdown voltage of 348 V, a specific on-state resistance of 4.2 m Omega.cm(2) and a leakage current density of 9.2x10(-6) A/cm(2) at -90 V. The device fabricated on n-bulk substrate showed a breakdown voltage of 600 V, a specific on-state resistance of 1.3 m Omega.cm(2) and a leakage current density of 8.1x10(-8) A/cm(2) at -100 V. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
