RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates
Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J., Snyder, D., Redwing, J. M., Paskova, T., Udwary, K., Mulholland, G., Preble, E., Evans, K. R., Wetzel, C., & Khan, A. (2011). Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.201001059
The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x10(18) cm(-3) to 2x10(16) cm(-3) as the growth temperature was reduced from 1100 degrees C to 950 degrees C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x10(13) cm(-3) with a room temperature mobility of 1600 cm(2)/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
