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DEPENDENCE OF THERMAL CONDUCTIVITIES OF THE ALN FILM IN THE LED ARCHITECTURE ON SURFACE ROUGHNESS AND LATTICE MISMATCH
Su, Z., Malen, J. A., Freedman, J. P., Davis, R. F., Leach, J. H., & Preble, E. A. (2014). DEPENDENCE OF THERMAL CONDUCTIVITIES OF THE ALN FILM IN THE LED ARCHITECTURE ON SURFACE ROUGHNESS AND LATTICE MISMATCH. In PROCEEDINGS OF THE ASME SUMMER HEAT TRANSFER CONFERENCE - 2013, VOL 1 AMER SOC MECHANICAL ENGINEERS.
Thickness dependent thermal conductivity measurements were made on aluminum nitride (AIN) thin films grown by two methods on the (0001) surfaces of silicon carbide (SiC) and sapphire substrates with differing surface roughness. We find that the AIN layer itself makes a small contribution to the overall thermal resistance. Instead, the thermal boundary resistance (TBR) of 5.1 +/- 2.8m(2)-K/GW between the AIN and substrate is equivalent to 240 nm of highly dislocated AIN, or 1450 nm of single crystal AIN. An order-of-magnitude larger TBR was measured between AIN films and SiC substrates with increased surface roughness (1.2 nm vs. 0.2 nm RMS). High resolution TEM images reveal near-interface planar defects in the AIN films grown on the rough SiC that we hypothesize are the source of increased TBR.
