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Cyan and green light emitting diode on non-polar m-plane GaN bulk substrate
Detchprohm, T., Zhu, M., You, S., Li, Y., Zhao, L., Preble, E. A., Paskova, T., Hanser, D., Wetzel, C., & Park, SJ. (2010). Cyan and green light emitting diode on non-polar m-plane GaN bulk substrate. In PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.200983611
We report the development of non-polar light emitting diodes (LEDs) covering the emission spectra from 480 to 520 nm (dominant wavelength), i.e. from cyan to the green region. The devices are obtained via GaInN-based homoepitaxy on non-polar m-plane GaN bulk substrate. Owing to the absence of piezoelectric polarization, these LEDs exhibit stable emission color with a wavelength shift less than 3 nm when the drive current density is changed from 0.1-30 A/cm(2). However, we observe a decreasing electroluminescence efficiency as the emission wavelengths increases from cyan to green. We tentatively attribute this to a higher density of defects in the longer wavelength structures. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
