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2 ''-4 '' diameter GaN-on-sapphire substrates free of wafer bow at all temperatures
Preble, E. A., Leach, J. H., Metzger, R., Shishkin, E., & Udwary, K. A. (2014). 2 ''-4 '' diameter GaN-on-sapphire substrates free of wafer bow at all temperatures. In CR. Eddy, M. Kuball, DD. Koleske, & H. Amano (Eds.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (pp. 604-607). WILEY-V C H VERLAG GMBH. https://doi.org/10.1002/pssc.201300554
A heteroepitaxial GaN-on-sapphire template growth strategy is presented that eliminates wafer bow in the final structure at both room temperature and at high crystal growth temperatures. The technology is demonstrated here on 2 '' and 4 '' substrate sizes with GaN epitaxy thicknesses up to 150 mu m with a sub-nm, epi-ready, final surface roughness. Wafer bow vs. temperature measurements for (a) 15 mu m of GaN on 4 '' 650 mu m thick sapphire showing 280 mu m bow shift, (b) 10 mu m GaN film on 2 '' 430 mu m thick sapphire showing 120 mu m bow shift, and (c) and (d), 15 mu m of FLAAT GaN on 2 '' and 4 '' sapphire, respectively, each showing less than 30 mu m of bow shift.
